类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8) |
内存接口: | SPI |
时钟频率: | 10 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
70V631S10PRFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
MT29F4G01AAADDHC-IT:DMicron Technology |
IC FLASH 4GBIT SPI 63VFBGA |
|
AT49LH004-33TC-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 40TSOP |
|
70V631S15PRF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
N25Q128A13E1240F TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
S34ML02G100BHA003SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |
|
AT24C02A-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
N25Q032A13E1241F TRMicron Technology |
IC FLASH 32MBIT SPI 24TPBGA |
|
IS25WD040-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT SPI 80MHZ 8WSON |
|
IDT71V3558S133BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IS43LR16160F-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 60TFBGA |
|
IS43DR16128B-25EBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
23LCV1024-E/SNRoving Networks / Microchip Technology |
IC SRAM 1MBIT SPI/DUAL I/O 8SOIC |