类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (4K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 48-DIP (0.600", 15.24mm) |
供应商设备包: | 48-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V2558S100BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT46V32M16FN-6 IT:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT29C010A-70TURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT28C64X-15PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
|
MT48LC4M32LFB5-8 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
N25Q064A11ESE40F TRMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO |
|
AT49F4096A-90TCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
AT28HC256E-70PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
PC28F128J3F75DMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
MTFC32GAPALBH-AAT ESMicron Technology |
IC FLASH 256GBIT MMC 153TFBGA |
|
AT27LV520-90SIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 20SOIC |
|
IS61LPD102418A-200B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
DS1250Y-70INDMaxim Integrated |
IC NVSRAM 4MBIT PARALLEL 32EDIP |