类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q16DWZPIG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
MT53D384M32D2DS-053 WT ES:CMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
AT27C256R-90PIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28DIP |
|
M25P16-VMC6TG TRMicron Technology |
IC FLSH 16MBIT SPI 75MHZ 8UFDFPN |
|
SST39LF040-55-4I-WHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
MT29F64G08CECDBJ4-10:DMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
AT24C01A-10PC-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
CAT28F010G90Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT29C010A-15TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT49BV040A-90VU-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32VSOP |
|
IS49NLS18320-33BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
TC58CVG1S3HRAIGToshiba Memory America, Inc. (Kioxia America, Inc.) |
IC FLASH 2GBIT SPI 104MHZ 8WSON |
|
W632GU6KB12IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |