类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.1 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25X16VZPIG T&RWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 75MHZ 8WSON |
|
IDT71V416VS10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
SST26VF032BT-104I/SM70SVAORoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIJ |
|
IS42S16400F-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 54TSOP II |
|
MT29F2G08ABDWP:D TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
IS61VF51236A-6.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IS42S32200E-6B-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
MT48LC4M32LFB5-8 XT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
MX29LV400CTXEI-90GMacronix |
IC FLASH 4MBIT PARALLEL 48LFBGA |
|
AT25040AN-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |
|
W632GG6KB15IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
AT27C040-12PCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32DIP |
|
70V9169L9PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |