English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | GL-S |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 60ns |
| 访问时间: | 110 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LBGA |
| 供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
71V35761S183BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
CY7C1460KV25-167BZCTCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
AT24C1024BW-SH25-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
IS42S32800D-75ETLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
MT45W1MW16BAFB-706 WT TRMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
AT27C4096-70JCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 44PLCC |
|
CY7C1380D-167AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS42SM16160E-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
IDT71V416S12YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AT27C010-70TIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
IDT6116SA25SORenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
MT46V32M16TG-75E:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
AT49BV512-15JCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
