类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 90 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 44-LCC (J-Lead) |
供应商设备包: | 44-PLCC (16.6x16.6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C256N-10SU-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8SOIC |
|
IS61DDB41M36A-300M3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT28F004B3VG-8 TETMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP I |
|
IS41LV16105B-50TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 44TSOP II |
|
AT25640T2-10TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 20TSSOP |
|
7025L15PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
MT45W4MW16BCGB-708 WTMicron Technology |
IC PSRAM 64MBIT PARALLEL 54VFBGA |
|
W632GG8MB-12 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
AT24C32W-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 8SOIC |
|
M29W800DB45ZE6EMicron Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
AT24C01A-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
S25FL129P0XBHIY13Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
W9825G6JH-6 TRWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 54TSOP II |