类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 200ns |
访问时间: | 200 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 28-DIP Module (0.600", 15.24mm) |
供应商设备包: | 28-EDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C64AW-10SI-1.8Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
AT27C256R-12PARoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28DIP |
|
CY7C1021BNV33L-15VXCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
IS43DR16128B-3DBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
MT29F1T208ECCBBJ4-37:BMicron Technology |
IC FLASH 1.125T PAR 132VBGA |
|
M25PX32-VMP6FBA TRMicron Technology |
IC FLASH 32MBIT SPI 75MHZ 8VDFPN |
|
IS42S32800B-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
AS4C512M8D3LA-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
CY7C1270V18-400BZCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
W25Q128FVSJQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
S29GL064S90FHI010Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
AT49LH002-33JC-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT25160AN-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 20MHZ 8SOIC |