类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM |
内存大小: | 256Mb (16M x 16) |
内存接口: | Parallel |
时钟频率: | 143 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5.4 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-LFBGA |
供应商设备包: | 54-LFBGA (8x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49F001NT-70TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
AT24C08AN-10SC-1.8Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
IS43DR16128B-3DBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
AT24C02AN-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
7130LA55PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
CY7C024E-25AXCTCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
70V5388S166BCIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
SST26VF032-80-5I-S2AE-TRoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
IDT71V35761YSA200BQI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
MT29F256G08CMCBBH2-10:B TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
W25X80VSSIG T&RWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 75MHZ 8SOIC |
|
71321LA25JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT34C02-10TCRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |