类型 | 描述 |
---|---|
系列: | MXSMIO™ |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | SPI - Quad I/O, DTR |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 60µs, 750µs |
访问时间: | - |
电压 - 电源: | 1.65V ~ 2V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-BGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39LF200A-45-4C-EKE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
IS46TR16128BL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
IS61LPS25636A-200TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
N25Q128A11E1241F TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
GD5F4GQ4UBYIGYGigaDevice |
IC FLASH 4GBIT SPI/QUAD 8WSON |
|
NAND02GW3B2DN6EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP |
|
70V9279S15PRFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
W631GU6KB12IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
IS42S83200D-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
M25PX16-VMP6GMicron Technology |
IC FLASH 16MBIT SPI 75MHZ 8VDFPN |
|
JS28F256M29EWLB TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
W25Q32FVDAIG TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8DIP |
|
SST39VF020-70-4C-B3KERoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48TFBGA |