English
简体中文
XTAL OSC SO 100.0000MHZ HCSL SMD
MOSFET N-CH 650V 42A I2PAK
DDR SRAM, 2MX36, 0.45NS PBGA165
IC FLASH 256GBIT PAR 100TBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND (MLC) |
| 内存大小: | 256Gb (32G x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 100 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-TBGA |
| 供应商设备包: | 100-TBGA (12x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C256-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
W25Q80JVSSIQ TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 133MHZ 8SOIC |
|
M36W432T85ZA6TSTMicroelectronics |
IC FLASH 32MBIT PARALLEL 66LFBGA |
|
AT24C64-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ 8DIP |
|
BR95040-WDS6TPROHM Semiconductor |
IC EEPROM 4KBIT SPI 5MHZ 8TSSOP |
|
RC28F00AM29EWLAMicron Technology |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
IDT71V416VS12BEI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 48CABGA |
|
S29GL512S11FHA023Cypress Semiconductor |
IC FLASH 512MB FLASH NOR 64FBGA |
|
IDT71P79804S250BQGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
71321SA35PF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AT28C010-25SCRoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32SOIC |
|
MT28F400B5SG-8 B TRMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
|
AS4C512M8D3LB-10BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |