English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 256Kb (16K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
25C040X/STRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 3MHZ 8TSSOP |
|
IDT71T016SA20PHGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS25LP064-JBLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
CY7C199CN-12ZXCTCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
CAT25160VI-GCSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8SOIC |
|
MT44K16M36RB-125:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
M29DW128F70NF6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
IDT71V25761SA183BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
M93C66-MN6PSTMicroelectronics |
IC EEPROM 4KBIT SPI 2MHZ 8SO |
|
IS61VF51236A-6.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT28C64X-15SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
AT24C128N-10SU-1.8Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8SOIC |
|
CY7C027-20AXCTCypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |
