类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 4Gb (128M x 32) |
内存接口: | - |
时钟频率: | 1.6 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
SST25PF080B-80-4C-S2AE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
![]() |
7026L25J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
![]() |
MT46V32M16P-75 IT:C TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
![]() |
MT48LC2M32B2P-6 IT:G TRMicron Technology |
IC DRAM 64MBIT PAR 86TSOP II |
![]() |
PC28F512P30EFB TRMicron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
![]() |
MT48LC4M16A2F4-7E:G TRMicron Technology |
IC DRAM 64MBIT PARALLEL 54VFBGA |
![]() |
CY6264-55SNXICypress Semiconductor |
IC SRAM 64KBIT PARALLEL 28SOIC |
![]() |
IS46LD32320A-3BPLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 168VFBGA |
![]() |
M24128-BWMN6PSTMicroelectronics |
IC EEPROM 128KBIT I2C 1MHZ 8SO |
![]() |
MT46V32M16BN-6 IT:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
![]() |
7006S15PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
![]() |
IDT71P72804S250BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
![]() |
MT28F320J3FS-11 METMicron Technology |
IC FLASH 32MBIT PARALLEL 64FBGA |