English
简体中文
COMP O= .360,L= 2.50,W= .040
IC SRAM 9MBIT PARALLEL 119PBGA
LED ORG DIFF T-2MM STOVEPIPE T/H
TOUCH SCREEN CAPACITIVE 18.61"
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 9Mb (256K x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.5 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
S25FL164K0XMFI003Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 16SOIC |
|
MT48V4M32LFB5-10 IT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
USBF129T-V/SNVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 30MHZ 8SOIC |
|
MT46V16M16FG-5B:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
AT27LV256A-15TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
S29PL127J60BFI000ACypress Semiconductor |
IC FLASH 128MBIT PARALLEL 80FBGA |
|
MT53E256M32D2DS-053 WT:BMicron Technology |
IC DRAM 8GBIT 1.866GHZ 200WFBGA |
|
IS45S32400E-7TLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
S25FL164K0XMFB011Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
MT29F32G08CBCCBH1-12Z:CMicron Technology |
IC FLASH 32GBIT PARALLEL 100VBGA |
|
IDT71T016SA15PHRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
70V3379S4PRFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 128TQFP |
|
AT49SV163DT-80TURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |