类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 15ns |
访问时间: | 15 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-BSOJ (0.300", 7.62mm Width) |
供应商设备包: | 28-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F2G01AAAEDH4:EMicron Technology |
IC FLASH 2GBIT SPI 63VFBGA |
|
IS43TR16512AL-125KBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
AT24C512-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8TSSOP |
|
SST25WF040-40-5I-QAE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8WSON |
|
IS43DR82560B-25EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 60TWBGA |
|
S29GL064S80FHIS30Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
W25X80VSFIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 75MHZ 16SOIC |
|
AS4C512M8D3L-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
70P3519S200BCGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
MT46H64M32LFBQ-48 AIT:C TRMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
MT48LC8M16A2B4-6A AIT:LMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
7134SA45PRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48DIP |
|
AT27BV020-90TCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |