类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 400 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-VDFN Exposed Pad |
供应商设备包: | 8-DFN-S (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
71321SA20JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IS29GL01GS-11DHV02Cypress Semiconductor |
IC FLASH 1GBIT PARALLEL 64FBGA |
|
MT28EW01GABA1HJS-0SITMicron Technology |
IC FLASH 1GBIT PARALLEL 56TSOP |
|
MX25L3273EPI-10GMacronix |
IC FLASH 32MBIT SPI 104MHZ 8DIP |
|
CY7C109BN-12ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32TSOP I |
|
STK14D88-NF25Cypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
IDT71256SA12YGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
MT46V16M8P-75:DMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
MT29C4G48MAAGBAAKS-5 WTMicron Technology |
IC FLASH RAM 4GBIT PAR 137VFBGA |
|
N25Q064A13ESE40F TRMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
AT49BV001AN-55TURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IDT71V3559SA75BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
70V9269S9PRF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |