类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR |
内存大小: | 512Mb (32M x 16) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 700 ps |
电压 - 电源: | 2.5V ~ 2.7V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 66-TSSOP (0.400", 10.16mm Width) |
供应商设备包: | 66-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S25FL064P0XNFV001MCypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
7024S55JI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
7034L20PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
AT45DB081D-SU-2.5-ADAdesto Technologies |
IC FLASH 8MBIT SPI 50MHZ 8SOIC |
|
AT24C64W-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
W25Q64DWSFIGWinbond Electronics Corporation |
IC FLSH 64MBIT SPI 104MHZ 16SOIC |
|
AT49F002NT-90PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
AT49F001N-12TCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IDT71T75802S133PFRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS61LPS12836A-200B2LI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
DS2704RQC+T10Maxim Integrated |
IC EEPROM 1.25K 1-WIRE 8TDFN |
|
MT29F4G16ABADAWP-AIT:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
IDT7164L35YRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |