类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (4K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 48-DIP (0.600", 15.24mm) |
供应商设备包: | 48-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25B40AVSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
R1RW0408DGE-2LR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
PC28F128G18FEMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
CY14B104L-BA20XITCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
R1RP0416DGE-2LR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
7007S35PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
MT47H64M16HR-25E L:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
MT48LC4M32LFF5-10:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
AT28LV256-20JIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 32PLCC |
|
S25FL164K0XMFV013Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
IS46TR82560DL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 78TWBGA |
|
CYDM064B16-40BVXITCypress Semiconductor |
IC SRAM 64KBIT PARALLEL 100VFBGA |
|
LH28F160S3HT-L10ASharp Microelectronics |
IC FLASH 16MBIT PARALLEL 56TSOP |