类型 | 描述 |
---|---|
系列: | GL-P |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 90ns |
访问时间: | 90 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (13x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W632GG6MB12IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
CY7C025AV-20ACCypress Semiconductor |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
AT93C86-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8DIP |
|
70V9279L7PRFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
AT29BV010A-12JURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IS42S32200E-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
IDT71V3578S133PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29F2G01ABAGDSF-IT:G TRMicron Technology |
IC FLASH 2GBIT SPI 16SO |
|
IDT71256TTSA25YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
AT29LV020-12TURoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
709289L7PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
MT48LC16M8A2TG-75 L:GMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
MT48LC4M16A2P-6:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |