类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 3ms |
访问时间: | 250 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 28-TSSOP (0.465", 11.80mm Width) |
供应商设备包: | 28-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S16100F-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
AT24C64D-MAPD-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8UDFN |
|
IS42S83200B-6T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
M29F800FT5AN6F2 TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MT28F004B3VG-8 BETMicron Technology |
IC FLASH 4MBIT PARALLEL 40TSOP I |
|
AT27BV256-70TIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
24LC1026T-E/STRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 8TSSOP |
|
70V24S20J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
IDT6116SA20SOI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
CAT28LV65WI25Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
MT29F4G16ABBDAH4-AIT:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
IDT71V632S7PF8Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 100TQFP |
|
IS29GL256S-10DHV01-TRCypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |