类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C16A-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 8TSSOP |
|
IDT71256SA20PZIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
U6264BS2C07LLG1TRAlliance Memory, Inc. |
IC SRAM 64KBIT PARALLEL 28SOP |
|
MT28F400B3SG-8 BMicron Technology |
IC FLASH 4MBIT PARALLEL 44SOP |
|
AT28HC256E-90SCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
MT46V32M16TG-5B:FMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IS61NLF51236-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
MT29F128G08CFAABWP-12Z:A TRMicron Technology |
IC FLASH 128GBIT PAR 48TSOP I |
|
7130SA55JI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
70V9279L7PRFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MX29LV800CTXEI-45QMacronix |
IC FLASH 8MBIT PARALLEL 48LFBGA |
|
CY14B512I-SFXITCypress Semiconductor |
IC NVSRAM 512KBIT I2C 16SOIC |
|
AT49F002N-12PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |