类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 32-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M25P40-VMN6TPB TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8SO |
|
MT48LC64M8A2TG-75:C TRMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
AT25010A-10TU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8TSSOP |
|
IS42RM16800G-6BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
W25Q128FWSIQWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
IDT71V35761S200BQG8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT25640N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8SOIC |
|
AS4C256M16D3A-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT25160N-10SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
IS25CD512-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 512KBIT SPI 8SOIC |
|
CAT28F001GI-90TSanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
IS46TR16640AL-125JBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IS66WVE2M16ALL-7010BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 32MBIT PARALLEL 48TFBGA |