English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 667 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-WBGA (10.5x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
TE28F160C3BD70AMicron Technology |
IC FLSH 16MBIT PARALLEL 48TSOP I |
|
709089S15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
DS1330WP-100INDMaxim Integrated |
IC NVSRAM 256KBIT PAR 34PWRCAP |
|
JS28F256P33T95AMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
M25P20-VMP6TGB TRMicron Technology |
IC FLASH 2MBIT SPI 75MHZ 8VFQFPN |
|
IS62WV25616DBLL-45BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
JS28F512P33EFAMicron Technology |
IC FLASH 512MBIT PARALLEL 56TSOP |
|
70V9369L6PFRenesas Electronics America |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
S25FS064SAGMFB010Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
MT29F256G08CKCABH2-12:A TRMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
AT24C1024BW-SH-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
IS42S16320B-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54WBGA |
|
AT93C46A-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
