类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 288Mb (8M x 36) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 144-TFBGA |
供应商设备包: | 144-FBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT45DB041A-TIRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 13MHZ 28TSOP |
|
CY7C1021CV33-12VXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
7130LA25PFI8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
IDT71V65602S100BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 165CABGA |
|
70V09L20PFI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
NAND01GR3B2BZA6EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
AS4C256M8D3-12BCNAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
MT46V64M8P-6T:DMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
RC28F256J3C125SL7HEMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
CY7C1470V33-200AXCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
IDT71V424S12YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
IS42S32400D-6BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
MT29F4G16ABBDAHC-IT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |