类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, DDR II |
内存大小: | 36Mb (1M x 36) |
内存接口: | Parallel |
时钟频率: | 375 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S16800D-75EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54MINIBGA |
|
IS43DR16320D-3DBI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 84TWBGA |
|
MT46V16M8P-6T IT:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
IDT6116SA20TPIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
AS4C128M16D3-12BANAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
S29GL128P90FFSS70Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
W25Q80BLZPIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8WSON |
|
W25Q128FVSIF TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8SOIC |
|
IS49NLC36160-33BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
IDT71V256SA12YIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
S25FL132K0XMFB043Cypress Semiconductor |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
W25Q128FWEIQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AT45DB021D-SSH-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 66MHZ 8SOIC |