类型 | 描述 |
---|---|
系列: | GL-S |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 512Mb (64M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 110 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 64-LBGA |
供应商设备包: | 64-FBGA (9x9) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT28C64-20SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
MT29C4G48MAZBAAKS-5 WT TRMicron Technology |
IC FLASH RAM 4GBIT PAR 137VFBGA |
|
FM93C56NSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 1MHZ 8DIP |
|
CY7C1380S-167AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IS42S32200E-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
AT45DB041B-TIRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 20MHZ 28TSOP |
|
709079S12PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
NMC27C16BQE150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 16KBIT PARALLEL 24DIP |
|
IS42S32400B-6TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
AT25BCM512C-MAHF-TAdesto Technologies |
IC FLASH 512KBIT SPI 70MHZ 8UDFN |
|
W25Q16JVUUJQWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8USON |
|
709269S12PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
IS29GL512S-11DHB023Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |