







CRYSTAL 12.0000MHZ 14PF SMD
MOSFET N-CH 200V 3.4A DIRECTFET
IC DRAM 12GBIT 1866MHZ 200WFBGA
15KILOV ESD-PROTECTED, SINGLE, C
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 12Gb (384M x 32) |
| 内存接口: | - |
| 时钟频率: | 1.866 GHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
IS61NVP51236-250B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
|
AT49BV002N-12TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
|
AT27C1024-45JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 44PLCC |
|
|
W25Q32JVXGJQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8XSON |
|
|
MT41J64M16JT-15E XIT:GMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
|
IS62WV25616DALL-55BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48MINIBGA |
|
|
STK12C68-L35ICypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28LCC |
|
|
IDT71V424S12YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
|
AT25320W-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 3MHZ 8SOIC |
|
|
71024S25TYGRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
|
N01L83W2AN25ITSanyo Semiconductor/ON Semiconductor |
IC SRAM 1MBIT PARALLEL 32STSOP I |
|
|
AS4C64M32MD2A-25BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 134FBGA |
|
|
AT28C64X-15PCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |