类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 288Mb (8M x 36) |
内存接口: | Parallel |
时钟频率: | 400 MHz |
写周期时间 - 字,页: | - |
访问时间: | 20 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 144-TFBGA |
供应商设备包: | 144-µBGA (18.5x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7130LA35PRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48DIP |
|
AT49BV321-11CIRoving Networks / Microchip Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
IS43R83200B-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
W25X16AVSSIGWinbond Electronics Corporation |
IC FLASH 16MBIT SPI 75MHZ 8SOIC |
|
MT28EW256ABA1LPC-1SIT TRMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |
|
BR93C86-WDW6TPROHM Semiconductor |
IC EEPROM 16KBIT SPI 2MHZ 8TSSOP |
|
MT46V64M8BN-6:DMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT41J128M16HA-15E IT:DMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
MR2A16ATS35CRNXP Semiconductors |
IC RAM 4MBIT PARALLEL 44TSOP II |
|
CAT28F010GI-12TSanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
MT44K16M36RB-107:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
AT27C010-90JIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
SST39VF200A-70-4I-M1QE-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 48WFBGA |