English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 70ns |
| 访问时间: | 70 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.465", 11.80mm Width) |
| 供应商设备包: | 32-sTSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1RW0416DGE-2PR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V3557SA85BQIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AT24C01-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
AT27C256R-45RIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
AT49F001-90JCRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT27C020-55PCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32DIP |
|
AT24C11-10TU-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8TSSOP |
|
MT46V64M8TG-75Z:DMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
IS42S32800D-75EB-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
IDT71024S12TYIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CAT24C64LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT I2C 1MHZ 8DIP |
|
M29W160ET70N6EMicron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
CY7C1426AV18-167BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
