类型 | 描述 |
---|---|
系列: | StrataFlash™ |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8, 8M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 75ns |
访问时间: | 75 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29C1G12MAAIYAMR-5 AITMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
IS43TR16128B-093NBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
W25Q256JVFJMWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
IS49NLC18320-25EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
MT48LC8M32B2TG-7 TRMicron Technology |
IC DRAM 256MBIT PAR 86TSOP II |
|
IS49NLC18320-25EBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 576MBIT PAR 144FCBGA |
|
M27C801-100F6STMicroelectronics |
IC EPROM 8MBIT PARALLEL 32CDIP |
|
7005L35PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
AT25010AY1-10YU-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8MAP |
|
USBF4100-E/SNVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8SOIC |
|
M28W160CB100N6T TRMicron Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AT24C1024B-TH25-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8TSSOP |
|
7130SA20TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |