类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 256Gb (32G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.65V ~ 3.6V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 169-VFBGA |
供应商设备包: | 169-VFBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1LP5256ESP-5SI#B0Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOP |
|
MT47H128M16PK-25E IT:CTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 84FBGA |
|
70914S25PFRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
AT49F001A-55JIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT25010-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DIP |
|
STK14C88-3NF45TRCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
W9816G6IH-6Winbond Electronics Corporation |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71024S20YIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT29F1G16ABCHC:C TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
MT29C8G96MAZBBDJV-48 ITMicron Technology |
IC FLASH RAM 8GBIT PAR 168VFBGA |
|
71321LA20JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT48H8M32LFB5-75 IT:HMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
IS29GL256S-10DHB02-TRCypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |