类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S16100C1-7TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IDT71P71604S250BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
S25FL164K0XBHVS20Cypress Semiconductor |
IC FLASH 64MBIT SPI/QUAD 24BGA |
|
IDT71P74604S200BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
MT41K256M8DA-125 AIT:KMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
AT25010-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 3MHZ 8DIP |
|
AS4C32M16MD1-5BINAlliance Memory, Inc. |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
N25Q00AA13G1240EMicron Technology |
IC FLSH 1GBIT SPI 108MHZ 24LPBGA |
|
IS43TR85120AL-15HBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
IS42S16160D-7TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
AT25640B-MAPDGV-ERoving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 5MHZ 8UDFN |
|
71421LA25PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
M27C4002-70C6STMicroelectronics |
IC EPROM 4MBIT PARALLEL 44PLCC |