English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 400 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1RP0416DGE-2PR#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
MT47H256M4BT-5E:AMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
PC48F4400P0VB0E3Micron Technology |
IC FLASH 512MBIT PAR 64EASYBGA |
|
AT25080-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
AS4C32M32MD1-5BINAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 90FBGA |
|
AT24C04Y1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 400KHZ 8MAP |
|
MT29F512G08CEHBBJ4-3RES:B TRMicron Technology |
IC FLASH 512GBIT PAR 132VBGA |
|
IS41C16105C-50KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
AT27C010L-55JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
IS61LPS25636A-200TQ2I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
IDT71V3576YS133PFG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS43R83200B-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
|
NM24C02NSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
