类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (64M x 4) |
内存接口: | SPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 8ms, 5ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-T-PBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42S81600E-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
CY7C1009B-20VXCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CY7C1470V33-167AXCTCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 100TQFP |
|
MT48V4M32LFB5-8:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
FT24C64A-EDR-BFremont Micro Devices |
IC EEPROM 64KBIT I2C 1MHZ 8DIP |
|
70V27L15PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
IS42RM32400G-75BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
CY7C1006D-10VXITCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 28SOJ |
|
IDT71V3578S150PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AT27LV020A-90JIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
W25Q256FVBIF TRWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
|
M29W640GH70ZS6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
NM93C06EM8Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256B SPI 1MHZ 8SO |