类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, QDR II |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 200 MHz |
写周期时间 - 字,页: | - |
访问时间: | 8.4 ns |
电压 - 电源: | 1.7V ~ 1.9V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-CABGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61NLP25618A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 165PBGA |
|
W25X64VZEIGWinbond Electronics Corporation |
IC FLASH 64MBIT SPI 75MHZ 8WSON |
|
W632GU6MB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
NM24C02LENSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 100KHZ 8DIP |
|
IS42S16100F-7TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
709379L12PFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
AT49LV002N-12JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT27LV010A-12TCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32TSOP |
|
NAND512W3A2DZA6EMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
|
IS42S32400B-7TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
MT48LC16M8A2BB-7E:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 60FBGA |
|
W25Q32FVXGJQ TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8XSON |
|
SST25VF064C-80-4C-Q2AE-TRoving Networks / Microchip Technology |
IC FLASH 64MBIT SPI/DUAL 8WSON |