English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR2 |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 400 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 450 ps |
| 电压 - 电源: | 1.7V ~ 1.9V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 60-TFBGA |
| 供应商设备包: | 60-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
7130LA35J8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
MT48LC16M16A2BG-75:DMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
IS46TR16640A-125JBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IS61NLF102418B-6.5B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT27C040-15PIRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32DIP |
|
IS43QR16256A-093PBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
AT24C256-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
MX29LV400CBMC-55QMacronix |
IC FLASH 4MBIT PARALLEL 44SOP |
|
70V05L35PFRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
SST26VF016BT-104V/MF70SVAORoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WDFN |
|
AT27BV256-90JIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
MT40A256M16GE-075E IT:B TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
IS42S16800E-6TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
