English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-TFSOP (0.724", 18.40mm Width) |
| 供应商设备包: | 32-TSOP (8x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71256SA15YI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
NM27C512V150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
FT24C256A-EDR-BFremont Micro Devices |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
MT48H16M32LFCM-75:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
IS61VPD51236A-200B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IS42S32200L-6BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
|
S29PL127J70BAI003Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 80FBGA |
|
W25Q80BVDAIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 104MHZ 8DIP |
|
MT29F1G08ABAEAWP:EMicron Technology |
IC FLASH 1GBIT PARALLEL 48TSOP I |
|
7024S35J8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
W25Q64JVZPJQ TRWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
71V3557S75PFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS43DR16160A-5BBLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 84TWBGA |
