类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-BSOJ (0.400", 10.16mm Width) |
供应商设备包: | 32-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V424L10YIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
AT49F001-90PIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
CY7C1041CV33-20VXETCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
MT28F128J3BS-12 MET TRMicron Technology |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
AT28LV64B-20JIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
MT41K256M8DA-125:KMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
IDT71V3558S100PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS45S16800E-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IDT71024S12TYRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
IS46TR16256AL-107MBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
IS42S32400D-7TIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
IS61LV6416-10BLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 48MINIBGA |
|
W632GU6MB15I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |