English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 1Gb (64M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 800 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 20 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | -40°C ~ 115°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT45DB021B-TCRoving Networks / Microchip Technology |
IC FLASH 2MBIT SPI 20MHZ 28TSOP |
|
CY7C1318BV18-278BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
NM24C08MSanyo Semiconductor/ON Semiconductor |
IC EEPROM 8KBIT I2C 14SOIC |
|
70V9279L9PRFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 128TQFP |
|
MT40A512M16JY-083E AUT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
AS4C512M8D3LA-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AT24C1024BN-SH25-BRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8SOIC |
|
CY7C1399BNL-15ZXCTCypress Semiconductor |
IC SRAM 256KBIT PAR 28TSOP I |
|
AT27BV256-12TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
NM93C56LZNSanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT SPI 250KHZ 8DIP |
|
IDT71V65603S100PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
7025L45J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
IS43R16160B-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
