类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 84-LCC (J-Lead) |
供应商设备包: | 84-PLCC (29.21x29.21) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT47H256M8EB-25E IT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 60FBGA |
|
70V28L15PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
IDT71V3556S166BQGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
M29F800DT55N1Micron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
IDT71T75802S100PFRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CY7C09089V-6AXCCypress Semiconductor |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AT28BV64-30TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
7027S35PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
70V3319S166PRFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 128TQFP |
|
CY14B104N-ZS25XCCypress Semiconductor |
IC NVSRAM 4MBIT PAR 44TSOP II |
|
SST25VF080B-80-4I-SAERoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
|
IS61NLF25636A-7.5B2I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AS4C4M16D1-5TINTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |