类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 1Mb (64K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 50µs |
访问时间: | 70 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 40-TFSOP (0.488", 12.40mm Width) |
供应商设备包: | 40-VSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
PC28F128P30TF65B TRMicron Technology |
IC FLASH 128MBIT PAR 64EASYBGA |
|
IDT71V65803S100PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
CY7C1049CV33-10VXATCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
25LC160D-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8SOIC |
|
IDT71V35761S183PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
7007L20PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |
|
W25Q16CVSSJP TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
W632GU6KB11IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
IDT71V25761YSA166BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT49F002-70JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT27C040-12TCRoving Networks / Microchip Technology |
IC EPROM 4MBIT PARALLEL 32TSOP |
|
71421SA20JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT24C01A-10PIRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |