English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 50µs |
| 访问时间: | 90 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TC) |
| 安装类型: | Through Hole |
| 包/箱: | 32-DIP (0.600", 15.24mm) |
| 供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
24FC128-I/MNYRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8TDFN |
|
7025L17PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
S29GL064N11DFIV10Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
25LC320A-H/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 10MHZ 8SOIC |
|
IS25WQ080-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI 104MHZ 8WSON |
|
IDT71T75602S166PFI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
W25Q257FVFIQ TRWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 16SOIC |
|
MT29F1G16ABBDAHC-IT:D TRMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
CY7C1383D-100AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CAT28C64BH13I12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
24FC128T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIJ |
|
AT25640-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT SPI 3MHZ 8DIP |
|
IS46TR16256A-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
