类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.5V ~ 6.0V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F64G08CBCGBJ4-5M:G TRMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
MT48LC32M16A2TG-75:CTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
70V9099L7PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
AT93C56-10PI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8DIP |
|
70V05L25PF8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 64TQFP |
|
IS29GL512S-11DHB01-TRCypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
IDT71256SA15PZRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
BR24G01-3AROHM Semiconductor |
IC EEPROM 1KBIT I2C 1MHZ 8DIP |
|
IDT71016S12PHIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
M29W128GSH70N6EMicron Technology |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
N25Q128A13ESE40GMicron Technology |
IC FLSH 128MBIT SPI 108MHZ 8SOP2 |
|
AT24C256-10PCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
DS28CN01U-W0D+1T-CMaxim Integrated |
IC EEPROM 1KBIT I2C 400KHZ 8UMAX |