English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 3ms |
| 访问时间: | 250 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V9289L12PRF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 128TQFP |
|
IS61LPD102418A-200TQI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
CAT93C46RBYI-GT3Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 4MHZ 8TSSOP |
|
AT27LV512A-15JIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
STK12C68-L35Cypress Semiconductor |
IC NVSRAM 64KBIT PARALLEL 28LCC |
|
W971GG6KB-18 TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 84WBGA |
|
IDT71V256SA10PZGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
IS29GL256S-10DHV01Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
CY7C1021BNL-15ZXCTCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
AT28HC64B-70SIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
AT28HC64B-90SARoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
|
IDT71V67602S133BGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AT27C512R-12JIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
