类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 1Gb (128M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-TFBGA |
供应商设备包: | 78-TWBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W25Q256JVEJMWinbond Electronics Corporation |
IC FLASH 256MBIT SPI/QUAD 8WSON |
|
70V27S20PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
AT24HC02B-TH-BRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8TSSOP |
|
MT29F4G16ABCHC-ET:C TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
IS62WV12816DBLL-45BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 48MINIBGA |
|
STK17TA8-RF25ICypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |
|
IS42VS16100C1-10TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
IS42S16160B-7TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
W25Q80JVSVIQWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 133MHZ 8VSOP |
|
AT27C020-55TCRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32TSOP |
|
IS42S16160G-6TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT48LC4M32B2P-7:G TRMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
7008S20PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |