类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 3ms |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 28-DIP (0.600", 15.24mm) |
供应商设备包: | 28-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
X28HC256JI-90R5420Intersil (Renesas Electronics America) |
IC EEPROM 256KBIT PAR 32PLCC |
|
W25X40BVSSIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 104MHZ 8SOIC |
|
AT28BV256-20TIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28TSOP |
|
CY14MB064Q1B-SXITCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
CY7C1313SV18-250BZCCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 165FBGA |
|
23LCV512T-E/STRoving Networks / Microchip Technology |
IC SRAM 512KBIT SPI/DL 8TSSOP |
|
W972GG6JB-3IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 84WBGA |
|
CY7C1020CV33-10ZXCTCypress Semiconductor |
IC SRAM 512KBIT PAR 44TSOP II |
|
IDT71V2559S85PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
MT29F128G08CKCCBH2-12:CMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
CYDM128B16-40BVXICypress Semiconductor |
IC SRAM 128KBIT PAR 100VFBGA |
|
70V261S25PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
S29GL032N90FFIS33Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |