类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Discontinued at Digi-Key |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPSDR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 54-VFBGA |
供应商设备包: | 54-VFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IS45S32200E-6TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
![]() |
AT28LV256-25PIRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PARALLEL 28DIP |
![]() |
SST25PF040CT-40E/NP18GVAORoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 40MHZ 8USON |
![]() |
SST25VF040B-80-4I-SAERoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
![]() |
AT24C01B-PURoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 1MHZ 8DIP |
![]() |
IDT71V124SA10TYRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
![]() |
X28C512JIZ-12Intersil (Renesas Electronics America) |
IC EEPROM 512KBIT PAR 32PLCC |
![]() |
W631GG6KB12JWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
![]() |
IS41LV16105D-50KLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 42SOJ |
![]() |
IS61VPS102418A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
![]() |
MT48LC8M32LFB5-8 TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
![]() |
IDT71V3577SA75BGGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
![]() |
93AA86A-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |