类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 64Mb (16M x 4) |
内存接口: | SPI |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | 8ms, 5ms |
访问时间: | - |
电压 - 电源: | 1.7V ~ 2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 16-SO W |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
IS49NLS93200-25BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
![]() |
AT49BV001ANT-55TIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
![]() |
DS1265W-100+Maxim Integrated |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
![]() |
MT46V64M8FN-6:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
![]() |
CY7C1370DV25-250AXCTCypress Semiconductor |
IC SRAM 18MBIT PARALLEL 100TQFP |
![]() |
MT46V32M8FG-75E:GMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
![]() |
IDT71V67703S75PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
![]() |
IDT71V65903S80PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
![]() |
W631GU8KB-15Winbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
![]() |
AT28BV64-30PIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28DIP |
![]() |
CY7C1061DV33-10BVXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 48VFBGA |
![]() |
W25Q256JVCJMWinbond Electronics Corporation |
IC FLSH 256MBIT SPI/QUAD 24TFBGA |
![]() |
MT46H16M16LFBF-6 IT:A TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60VFBGA |