类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 32Kb (4K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V416L15PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
N25Q128A13BSFH0FMicron Technology |
IC FLASH 128MBIT SPI 108MHZ 16SO |
|
71V30L55TFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
AT24C08-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8DIP |
|
F640BFHEPBTL70ASharp Microelectronics |
IC FLASH 64MBIT PARALLEL 48TSOP |
|
AT29LV020-10JURoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AT29BV020-20JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
MTFC8GACAEAM-1M WTMicron Technology |
IC FLASH 64GBIT MMC 153WFBGA |
|
DS1265W-100INDMaxim Integrated |
IC NVSRAM 8MBIT PARALLEL 36EDIP |
|
IS25CQ032-JFLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI 104MHZ 8VSOP |
|
SST39WF400A-90-4I-M1QE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
MT29F768G08EEHBBJ4-3R:B TRMicron Technology |
IC FLASH 768GBIT PAR 132VBGA |
|
IDT71V416YS10PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |