English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM |
| 内存大小: | 128Mb (8M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 166 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 5.4 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 54-TFBGA |
| 供应商设备包: | 54-TFBGA (8x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25160N-10SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8SOIC |
|
AT93C57W-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
93C76AT-E/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
RC28F256J3D95AMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
IS29GL128S-10DHB02Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MT48LC128M4A2P-75:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
IDT71V424S12PHI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
IDT71V65803S133PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
MT28F800B5WG-8 B TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP I |
|
S27KL0642GABHB020Cypress Semiconductor |
IC PSRAM 64MBIT HYPERBUS 24FBGA |
|
CY7C1360B-166BGCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
AT34C02Y1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8MAP |
|
W25Q128FWPIFWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
