DIODE GP 50V 200MA SOD80
DIODE GEN PURP 600V 1.5A DO15
IC NVSRAM 16KBIT PARALLEL 28SOIC
FERRULES
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 28-SOIC (0.342", 8.69mm Width) |
供应商设备包: | 28-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
70V08L25PF8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
![]() |
M25PE40-VMP6TG TRMicron Technology |
IC FLASH 4MBIT SPI 75MHZ 8VDFPN |
![]() |
93AA86AT-I/STRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8TSSOP |
![]() |
MT49H8M36FM-25 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
![]() |
W632GU8NB12JWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
![]() |
IDT71P73604S200BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
![]() |
AS4C2M32S-5TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 86TSOP II |
![]() |
24FC04T-I/OTRoving Networks / Microchip Technology |
IC EEPROM 4KBIT I2C 1MHZ SOT23-5 |
![]() |
AT24C64N-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
![]() |
IS43DR16160A-37CBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 84TWBGA |
![]() |
MT46V32M16P-5B:JMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
![]() |
IS29GL512S-11TFV01-TRCypress Semiconductor |
IC FLASH 512MBIT PARALLEL 56TSOP |
![]() |
MT28F640J3RG-115 MET TRMicron Technology |
IC FLSH 64MBIT PARALLEL 56TSOP I |